Multiplication of nano memories (quantum electricity) by the method combined nanolithography

Note: Graphene nanomemories  have been developed molecularly, providing excellent programmable nanoscale memory performance compared to previous graphene memory devices and a memory window. Large (12V), fast switching speed (1 microsecond), shows strong electrical reliability.

Graphene molecular nanomemories shows unique electronic properties and its small dimensions, structural strength and high performance make it a charge storage medium for applications Nano memory is very promising. We use a set of techniques using a solution of nanoparticles, which creates a very thin layer on the target substrate and is used as a sacrificial layer during the nanopatterning process. will be

Due to the interaction between nanoparticles, they can organize themselves and create a thin layer that creates a hole between them, This technique was originally lithography It was called natural . Due to the integral nature of colloidal particles and their hydrophilic character, they form a colloidal crystal with ordered cavities through which the substances of interest penetrate and deposit on the substrate. For example, polystyrene latex nanospheres can be used.  Materials deposited on nanoparticles disappear after immersing the sample in a suitable solvent and sonication. This process is similar to a removal process.  The advantages of this technique include wide patterns, simplicity, good clarity and the ability to combine with other lithography techniques. On the other hand, this technique creates problems due to the limited forms available for patterned functional materials, the array of nanopatterns and the presence of point defects.  Combined nanolithography has also been used to perform successive exposures of chemical resists enhanced by optical lithography and electron beam lithography Block nanolithography Oriented copolymer is a combination of top-down lithography and bottom-up self-organization of two polymers to produce high-resolution nanopatterns over large areas. Typically, the self-organization of the block copolymer is randomly oriented and lacks long-range order , but the previous top-down pattern of the substrate for lithography The directional block copolymer provides., combined nanolithography irradiation of a substrate causes preferential growth of semiconductor material in the irradiated regions, which can be used to fabricate ordered arrays of semiconductor dots. .

Conclusion :

Graphene nanomemories  have been developed molecularly, showing excellent programmable nanoscale memory performance compared to previous graphene memory devices and a large memory window ( 12V), fast switching speed (1 microsecond), shows strong electrical reliability.