Study of Deposition Time and Concentr ation Eff ects on Properties of Nanocrystalline ZnS Thin Film s

There has been considerable interest in the study of s emiconducto r nanocrystals over last three decades [۱]. Wide band gap II-VI semiconductors are expecte d to be novel materials for optoelectronic de vices. Zinc sulphide belongs to II- VI group compound materials with large direct band gap between ۳.۴ to ۳.۷۰ eV depending upon compo sition [۲]. Several techniques such a s spray pyr olysis, pulse plating tec hnique, RF sputtering, MOCVD an d solution growth deposition techniq ue have be en used to deposit ZnS thin films. In solution growth depos ition, controlled chemical reactions play a key role for the d eposition o f the thin fil ms. In the p resent investigation, we study the effects of deposition time and conce ntration of p recursor solution on the properties of nanocrystalline ZnS thin films pr epared by S GD techniqu e [۳].Mate rials and m ethods:The Z nS thin fil ms were deposited ont o commercial microscope slide using triethyl amine (TEA) solution as a comple xing agent for zinc ion s. Six of glass slides (substrates) were immer sed in a dilute precurso r solution containing zinc, TEA and a source o f sulfide at ۷۰ƕC. The chemical sol ution was n ot stirred during the fil m deposition . The coated substrates were removed at the end of the cho sen duration of deposition (۱ till ۶ hours), washed in de-ionized water, dried in air at room tem perature, an d subjected to further a nalyses.

کلیدواژه ها:

ZnS ، Thin films ، Deposition time ، Semic onductor