مدل بندی و بهینه سازی سلولهای خورشیدی سد شاتکی گرافن/سیلیکون

In this paper, the photovoltaic properties of the graphene/n-type silicon (G/n-Si) Schottky barriersolar cells have been investigated by a new analytical model taking into account radiative andShockley-Read-Hall recombination. Then their performance has been optimized by modifying thework function of graphene and silicon properties, accounted for by variation of its thickness anddoping levels. Also, the temperature dependence of short-circuit current and conversion efficiencyof G/n-Si cells have been investigated.