Investigating the Effects of High-dose rate Proton beam of a Plasma Focus Device on the Characteristics of Electronic Components

This study investigated the effects of the proton beam of a dense plasma focus device on the bipolar transistor, MOSFET, diodes and optocouplers. The components were irradiated with ۱۵, ۲۵, and ۳۵ shots in the plasma focus device, at ۱۵ cm distance from the top of the anode, at ۱.۱ mbar of hydrogen pressure. In these conditions of the plasma focus device, the samples were exposed to fluence of about ۱۰۱۴ ion/cm۲ of protons with a continuous energy spectrum of up to ۱ MeV. The samples were analyzed using different bias voltages before and after irradiation. The results showed that the proton beam of plasma focus could destroy the atomic structure of semiconductor and influenced the I-V curve of electronic components.

کلیدواژه ها:

Radiation damage ، Dense Plasma focus ، proton beam