Design and Simulation of an Ultraviolet GaN LED

This work presents the design and simulation of AlGaN/GaN based UV-A LED on a sapphire substrate. We used periodic layers as multiple-quantum-well to reach better optoelectronic properties and used EBLs to reduce the leakage current in modern multi-quantum-well. We deposited ITO as a top layer and Ni/Au to form ohmic contacts to p-type GaN and approach higher frequency response. We performed simulation by “SILVACO Software” and followed the fabrication process based on “ATHENA” rules and techniques.

کلیدواژه ها:

Silvaco ، LED ، Ultraviolet ، Deposition ، Etching ، Athena ، Ohmic contact ، Oxide ، GaN