Design and Simulation of AlGaN/GaN HEMT
محل انتشار: دوازدهمین کنفرانس ملی مهندسی برق مجلسی
سال انتشار: 1402
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 99
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شناسه ملی سند علمی:
NCEEM12_006
تاریخ نمایه سازی: 30 آبان 1402
چکیده مقاله:
HEMT transistors are field-effect transistors formed from the combination of two semiconductors with different energy gaps. Presented here is a simulation of an AlGaN/GaN-based high electron mobility transistor (HEMT) on a sapphire substrate, which was conducted in this work. We used the "SILVACO Software" to simulate the manufacturing process, which was based on "ATLAS" principles and procedures, and we were able to generate the ID-VG, ID-VD, power gain, current gain, polarization charge, transconductance (Gm), conduction band energy, and valence band energy curves as a result.
نویسندگان
Behnam Okhravi
Hakim Sabzevari University, Faculty of Electrical and Computer Engineering, Sabzevar, Iran
Mohsen Ghasemi
Hakim Sabzevari University, Faculty of Electrical and Computer Engineering, Sabzevar, Iran