Nanowires (Nanowires) (Dielectric-Like Nanostructures)

Note: Nanowires are high aspect ratio, large area, dielectric-like nanostructures, where the uniformity of radial strain allows for unusable combinations of semiconductor materials. This  enables numerous applications of nanowires in electronics, optics, and quantum technologies in general.

In the nanowire particle propagation, nanowire particles are synthesized by calculating the nanowire particles embedded in the alumina template in air.  The morphology and phases of the nanowires/nanotubes are investigated by transmission electron microscopy (TEM) and X-ray diffraction (XRD), respectively.   The electronic reaction of the nanowire particles during oxidation plays a role in the formation of such nanowire nanostructures.

In the immersion method, the nanowires  have enough time to transfer from the nanowire particles to the pores; the formation stage of uniform nanoparticles is carried out slowly and finally uniform nanowires are formed. Structural study by multiplying the nanowire particles  in the immersion method, the nanowires are formed uniformly in all the pores and in a wide area in the nanowire particles. There is no change in the morphology of the nanowires by changing the Sr/Fe ratio. And the spectroscopy of nanowires with  different Sr/Fe ratios within the internal nanoparticles (uniform nanowires)  shows that the presence of Fe and Sr  elements is due to strontium ferrite. In  the spectroscopy of uniform nanowires, it is observed that in the sample, the ratio of Sr/Fe nanoparticles  is closer to its stoichiometric value in the electromagnetic composition of the nanoparticles,  while  due to the lower solubility of the uniform strontium nanowire molecules compared to  iron nitrate and the subsequent lower presence of strontium ions in  the reaction with the electromagnetic particles of the nanowires,  there is a higher amount of Fe ions in the final structure.

Conclusion:

Nanowires are high aspect ratio, large area, quasi-dielectric nanostructures, in which the uniformity of radial strain allows for unobstructed combinations of semiconductor materials. This  enables numerous applications of nanowires in electronics, optics, and quantum technologies in general.