Rapid growth of zinc oxide nanobars in presence of electric field by physical vapor deposition
سال انتشار: 1396
نوع سند: مقاله ژورنالی
زبان: انگلیسی
مشاهده: 414
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شناسه ملی سند علمی:
JR_JTAP-11-4_009
تاریخ نمایه سازی: 27 مرداد 1397
چکیده مقاله:
In this contribution, electric field has some effects to increase growth for specific time duration on zinc oxide (ZnO)nanobars. First, the zinc (Zn) thin film has been prepared by 235,000 V/m electric field assisted physical vapor deposition(PVD) at vacuum of 1.33 x 10-5 mbar. Second, strong electric field of 134,000 V/m has been used in ambient for growingZnO nanobars in term of the time include 2.5 and 10 h. The performances of the ZnO nanostructure in absence andpresence of electric field have been determined by scanning electron microscopy (SEM) and X-ray diffraction (XRD). Theresults of XRD analysis showed that ZnO has a hexagonal bars structure and a strongly preferred (101) orientation which isstrongest than without applying electric field. SEM analysis revealed that physical vapored ZnO thin film in presence ofelectric field are densely packed with uniform morphological, thinner and denser in distribution. Electric field effect forZnO growth in 2.5 h is better than it in the 2.5 h without electric field but by passing the time the media influence has goodpower almost as same as electric field. Through this electric field in PVD, the compact and uniform Zn film has beenachieved which is less diameter than ordinary PVD method. Finally, we carry out a series of experiments to grow differentorientationZnO nanobars with less than 100 nm in diameter, which are the time saving process in base of PVD everreported. Therefore, the significant conclusion in usage electric field is reducing time of growth.
کلیدواژه ها:
Zn thin film Physical vapor deposition (PVD) ZnO nanostructure Strong electric field
نویسندگان
Mehraban Jouya
Department of Solid State Physics, Faculty of Physics, K. N Toosi University of Technology, POB ۱۵۸۷۵-۴۴۱۶, Tehran, Iran
Fahime Taromian
Department of Solid State Physics, Faculty of Physics, K. N Toosi University of Technology, POB ۱۵۸۷۵-۴۴۱۶, Tehran, Iran
Simin Siami
Department of Solid State Physics, Faculty of Physics, K. N Toosi University of Technology, POB ۱۵۸۷۵-۴۴۱۶, Tehran, Iran