Electrical properties and I–V characteristics of 5,14-dihydro- 5,7,12,14-tetraazapentacene doped Schottky barrier diode

The current–voltage (I–V) characteristics of Aluminium/5,14-dihydro-5,7,12,14-tetraazapentacenes (L5H2 orDHTAPs) doped surface-type structures were investigated inair at ambient temperature and moisture. The conventionalforward bias I–V method, Semi-logarithm, Cheung functionsand modified Norde’s function were used to extract the diodeparameters including ideality factor, series resistance andbarrier height. The parameter values obtained from these fourdifferent methods were found in good agreement.

کلیدواژه ها:

Schottky diodes 5 ، 14-dihydro-5 ، 7 ، 12 ، 14- tetraazapentacenes (L5H2 or DHTAPs) doped Series resistance Ideality factor Barrier height