The effect of varying temperature and O2 flow rate in ex situ annealed tin-doped indium for fabrication of commercial gradeindium tin oxide

In this work, tin-doped indium was deposited ona glass substrate via the electron beam evaporation technique.Then, the as-grown thin films were baked in thepresence of oxygen at different O(2) flow rates and temperaturesinside a furnace to obtain transparent conducting oxidethin film structures. The electrical and optical properties ofthe layers were investigated, the thickness of all samples waskept at 500 nm and the rate of deposition was set at0.1 nm min(-1). The best optical and electrical propertieswere obtained at O(2) flow rate of 1.5 Nl min(-1) and temperaturesof 500 ̊ C where above 90 %optical transparency and≤4 x 10(-3) ohm cm(-1) electrical resistivity were achieved.