Influence of periodically propagating impurity and accompanying time variation of impurity spread on excitation profile of doped quantum dots

We investigate the excitation behavior of a repulsive impurity-doped quantum dot induced by the simultaneousoscillations of the impurity coordinate and spatial stretch of the impurity domain. We have considered repulsiveGaussian impurity centers. The ratio of two oscillations (η) has been exploited to understand the nature of theexcitation rate. Indeed, it has been found that the said ratio could orchestrate the excitation in a most elegant way. Inconjunction with the ratio, the dopant location also plays some important role towards modulating the excitationrate. The present study also indicates attainment of stabilization in the excitation rate as soon as η exceeds a thresholdvalue irrespective of the dopant location. Moreover, prior to the onset of stabilization, we also envisagemaximization/minimization in the excitation rate at some typical η values depending on the dopant location. Thecritical dissection of the characteristics of various impurity parameters provides important insight into the physicsunderlying the excitation process.

کلیدواژه ها:

Quantum dot ، Impurity domain ، Impurity coordinate ، Impurity propagation ، Excitation rate