Synthesis of n-type and p-type CuInS2 thin films via simple SILAR method

Among various CuInS2-rerlated heterojunctions, it is expected that CIS-based p−n junctions are highperformancephoto-active electrodes. Herein, both n-type and p-type CuInS2 thin films were synthesized via facilesuccessive ion layer adsorption and reaction (SILAR) method, using aqueous (A-CIS) and mathanolic (M-CIS) SILARsolutions, respectively. Based on UV-visible transmission spectra, M-CIS thin films were more transparent with largerband gap energy (1.6 eV) than A-CIS thin films (1.5 eV). The A1-mode Raman peak of M-CIS thin film was located at293 cm-1 which has a red shift of 5 cm-1 as compared to A-CIS one, indicating that M-CIS has smaller CuInS2nanoparticles. The Mott-Schottky plots revealed that A-CIS is an n-type semiconductor, while M-CIS thin films havep-type semiconducting behavior, which is due to different Cu/In ratio in these thin films. The obtained results can bevery useful to prepared CIS-based p-n junctions toward high performance solar-based devices.

کلیدواژه ها:

CuInS2 thin film ، p-n heterojunction ، SILAR ، solar-based devices