Design of a 137dB low power operational amplifier working in weak inversion region using a novel approach

سال انتشار: 1395
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 583

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شناسه ملی سند علمی:

NSOECE05_077

تاریخ نمایه سازی: 10 تیر 1396

چکیده مقاله:

Operational amplifiers are one of the most popular elements in electronic circuit design and their performance including gain, bandwidth and power dissipation are quite important. Although BJT transistor amplifiers provide high gain and broad bandwidth, they usually have very high power consumption. CMOS operational amplifiers working in strong inversion have lower power consumption than BJT amplifiers but they usually have lower gain and narrower bandwidth. However it wasn’t until SPICE models for CMOS transistors developed before researchers could examine transistor behavior in moderate and weak inversion regions. It was then that it became evident that CMOS transistors in moderate and weak inversion have similar behavior to BJTs with very low power usage. In this research using the precise BSIM3 model, we design a two stage high gain (137dB) very low power opamp that operates in weak inversion region.

نویسندگان

SeyedPeyman Faghir Mirnezami

Postgraduate student, Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran

Mohammad Bagher Tavakoli

Assistant Professor, Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran

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