The Effect of Doping and The Thickness of The Layers on CIGS Solar Cell Efficiency
سال انتشار: 1394
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 747
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شناسه ملی سند علمی:
RSTCONF01_326
تاریخ نمایه سازی: 30 آبان 1394
چکیده مقاله:
The main problems with the use of fossil fuels is the restrictions on their access and the detrimental consequences of their use which causes a threat to human health and quality of life. Consequently, the use of other energy sources has become necessary. Renewable Energy as a permanent and clean energy source is an answer to this problem. One such energy source includes photovoltaic solar energy that is widely available as a reliable energy source. Research and Development of Photovoltaic Energy in general, will reduce costs and improve efficiency in both areas. CIGS solar cells have higher efficiency in comparison with other cells. Ion implantation and doping technique offers the unique structure of a solar cells. This paper will examine the performance of solar cells with Cu In0-x Gax Se2 structure. This will be performed by Silvaco software. Effect of doping phosphorus (p) and Natrium (Na), as well as the value of x and the thickness of the various layers of the solar cell, on the efficiency of the cell, have been studied
کلیدواژه ها:
نویسندگان
Seyed mohammad sadegh hashemi nassab
student of Electrical Engineering, Islamic Azad University of Fasa
Mohsen imanieh
Lecturer at Faculty of Electrical Engineering, Islamic Azad University of Fasa
Abbas kamaly
Lecturer at Faculty of Electrical Engineering, Islamic Azad University of Fasa