CFD Modeling, a New Research methodology in Manufacturing Nanocrystals Technology

سال انتشار: 1384
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 1,819

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شناسه ملی سند علمی:

NICEC10_026

تاریخ نمایه سازی: 6 بهمن 1385

چکیده مقاله:

Chemical vapor transport (CVT)) is known as one of the most efficient methods of synthesizing nanocrystals. In order to investigate the underlying phenomena in CVT processes, especially the growth rate and growth quality in relation to total pressure, temperatures of source and crystal ends, as well as the entangled chemical reactions, CFD modeling is pursued as a powerful and effective tool in lieu of expensive experimental work. CFD modeling has become an important component of the research or a new research methodology and will become increasingly important for simplifying the investigation of phenomena in processes. This paper is presented on how CFD modeling approach can be used as a research methodology in sciences and engineering. Two-dimensional numerical modeling on closed ampoule chemical vapor transport of ZnS–I2 system is conducted. The transport rate (TR) and its transition from diffusion-dominated to convection-dominated regimes in relation to total pressure, average temperature is studied intensively. Modeling results reveal that, the transition of TR from diffusion-dominated to convection-dominated regimes depends on P. Compared to the experimental literature values for all growth regimes, the modeling results agree with the experimental data.

نویسندگان

Hormozi

Semnan University, Semnan, Iran

Fazli

Semnan University, Semnan, Iran

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لیست زیر مراجع و منابع استفاده شده در این مقاله را نمایش می دهد. این مراجع به صورت کاملا ماشینی و بر اساس هوش مصنوعی استخراج شده اند و لذا ممکن است دارای اشکالاتی باشند که به مرور زمان دقت استخراج این محتوا افزایش می یابد. مراجعی که مقالات مربوط به آنها در سیویلیکا نمایه شده و پیدا شده اند، به خود مقاله لینک شده اند :
  • H. Endo, Chemical Physics Letters 387 (2004) 307-311 ...
  • C. R. Kleijn, Thin Solid Films 365 (2000) 294-306 ...
  • R. Zuo, and W. Wang, Journal of Crystal Growth 236 ...
  • R. Zuo, and W. Wang, Journal of Crystal Growth 236 ...
  • N. R amachandran _ C.H. Su, S.L. Lehoczky, J. Crystal ...
  • H. Zhou, A. Zebib, S. Trivedi, W.M.B. Duval, J. Crystal ...
  • G.P. Extremet, B. Roux, P. Bontoux, F. Elie, J. Crystal ...
  • B.L. Markham, F. Rosenberger, J. Crystal Growth 67(1984) 241 ...
  • B. Zappoli, C. Mignon, J.C. Launay, H. Debegnac, J.Crystal Growth ...
  • S.V. Patankar, Numerical Heat Transfer and Fluid Flow, Hemisphere, Washington, ...
  • P.N. Dangel, B.J. Wuensch, J. Crystal Growth 19 (1973) ...
  • unIranian Chemical Engineering Congress (IChEC10), Sistan & Balochestan University , ...
  • unIranian Chemical Engineering Congress (IChEC10), Sistan & Balochestan University , ...
  • unIranian Chemical Engineering Congress (IChEC10), Sistan & Balochestan University , ...
  • نمایش کامل مراجع