Nichols Stability Analysis for Single Wall Carbon Nanotube Interconnects Used in 3D-VLSI Circuits

Nichols stability analysis based on transmission line modeling (TLM) for single wall carbon nanotube (SWCNT) interconnects used in 3D-VLSI circuits is investigated for thefirst time. In this analysis, the dependence of the degree of relative stability for SWCNT interconnects on the geometry ofeach tube has been acquired. It is shown that, increasing the length and diameter of each tube, SWCNT interconnects become more stable

کلیدواژه ها:

single wall carbon nanotubes ، interconnects ، interlayer via ، transmission line method ، Nichols stability criterion