P roductio n and inve stigation about nan ostructur es of PbS thin films

PbS is a IV-VI se miconductor and has a narrow band gap. Due to the narrow gap, Lead sulfide absorb s infrared r adiation therefore it can be used in infrared detector. This material is not only used in various fields such as photograph y and optical absorption sensors but also is us ed as light resistance, Temperature and moisture sensors, Solar control and decorative coatings. For these properties and applicati ons of PbS, many Researchers ha ve turned to more study and under stand the pr operties of these materi als through various proc esses such as physical vapor deposition, Sputtering, Chemical vapor de position and chemical bath deposition. CBD method is more commonly used by researchers because of its low cost and easy to handle. CBD method does not require sophisticated t ools and ca pable of yie lding a thi n film with good qualit y on large su rfaces.Characteristics of thin films o btained, are strongly as sociated with the prope rties of materials used for to prepare of thin film, Techniq ues were us ed for deposition, growth Conditions and kind of the substra tes used [۱-۷].Optic al propertie s of narrow gap semiconductors a re considered, hence in this stud y, we review ed and stud ied the effe ct of deposition time and depositio n temperat ure on the optical prope rties, crystal structure an d morphology of chemically deposited PbS lay ers.

کلیدواژه ها:

Thin films ، Lead sulfide ، Deposition time ، Deposition temperature.