Design and Simulation of Ternary Inverter Gate based on NFET

In this paper an efficient ternary inverter gate is simulated. The main part of this design is a nanowire FET(NFET) and there are three separated gates on that oxide. By using this design, all three parts of ternary inverter include standard ternary inverter (STI), negative ternary inverter(NTI), and positive ternary inverter (PTI) are implemented by one circuit and without hardware change. The type of inverter function can be specified by the control gate voltage level. Self-consistent Schrodinger-Poisson equations is used to simulate the device. The simulation results indicate that the noise margins have improved a lot compared to previous designs.