J-V Characteristics of Heterojunction Solar Cell Based on Carbon Nanotube-Silicon

A structure for p-n hetrojunction solar cells have been presented as single wall Carbon Nanotubes (SWCNTs) as absorber and Si as semiconductor window with modest efficiencies. According to Eg=7.98/d (A˚), where d is tube diameter, the band gap of semiconducting SWCNTs (2–3nm in diameter) is estimated to be less than 0.5 eV and with the Fermi level in the middle of the band gap, the work function is assumed to be about 4.8 eV. For this structure, the J-V characteristics in dark and illumination conditions have been calculated theoretically by exerting general formulation of the current-voltage characteristic of a p-n heterojunction solar cell by assuming that the bands are flat in the junction. It is shown that efficiency of cell in one sun and 1.5 AM is about 12%.

کلیدواژه های J-V Characteristics of Heterojunction Solar Cell Based on Carbon Nanotube-Silicon:

Heterostructure Solar Cells ، Carbon Nanotube ، J-V Characteristics