The Switching Efficiency ( nMOS transistor) Can Block a Voltage Of Several Hundreds Of Volts With a Few Milliamps

Note: Since the operation of  nMOS transistors   is based on an electric field resulting from the input gate voltage (the name field effect is for this reason), it makes the field effect transistor a voltage-based component. nMOS transistors  are a single-pole semiconductor device whose characteristics are very similar to the same bipolar transistor.

Some of the features of this part are high efficiency, instantaneous operation, resistance and cheapness, which can be replaced in most electronic circuits with bipolar junction transistors and structurally similar (such as BJT).

The nMOS transistor is a new semiconductor device that can be used to control large amounts of load power. The switching characteristics  of an nMOS transistor   are very similar to a BJT in that  the nMOS transistor   either absorbs a high voltage and prevents the load current from flowing, or it goes to a low voltage and allows the load current to flow.  The third terminal can be used to apply a control current that initiates this breaking action.  The switching efficiency  of the nMOS transistor   is very high because in the circuit it can block a voltage of several hundred volts with a few milliamps or conduct 50 amps of current with a voltage drop of about 1.0 volts.  nMOS transistors have lower conduction losses in the on state, while their switching time is longer, especially when they are turned off. nMOS transistors are able to turn off and on much faster, so their conduction losses are higher. nMOS transistor is a transistor that has the advantages of BJT and MOSFET together.

One of the most important advantages of using nMOS transistor bipolar gate insulation   compared to other types of transistor devices is its high voltage capability, low resistance, ease of drive, relatively fast switching speed and zero drive current, and it can be a suitable option for Average speed in  high voltage circuits  .