A Low Noise and High Gain Distributed Amplifier Using Mismatched Transmission Line in 180nm CMOS Technology

This work presents an 11GHz three-stage semi-open (or shorted) transmission line (TL) distributed amplifier (DA) in 180nm CMOS technology. Removing 50Ω termination as a noise source in TL not only increases the input amplitude at the gain stages and then total gain, but also decreases the overall noise figure. Cascoded transistors are used in gain stages. Simulation results in 180nm CMOS technology demonstrate a flat gain of 13.73dB with ±0.64dB variation, while noise figure is kept below 2.5dB across the entire 11GHz of bandwidth. S11 and S22 are also below -9dB and -7.6dB, respectively. The group delay has only ±38pS variation in 10GHz bandwidth. The power consumption from a 1.8V power supply is also 24mW.

کلیدواژه ها:

distributed amplifiers (DAs) ، mismatched TL ، wideband ، low noise ، high gain.