Silicon Nanowire Fabrication Using Hydrogenation Assisted Plasma Etching Technique

A novel method for the fabrication of silicon nanostructures on silicon substrates is reported. This technique relies on a hydrogenation-assisted high aspect ratio plasma etching of Silicon substrates capable of producing nanowires with the height of more than 15 micrometers and width of between 100nm and 600nm

کلیدواژه ها:

Silicon Nanowire ، Plasma Etching ، Vertical Transistor ،