The effects of source/drain electrode materials on the electrical performance of the Ga-Sn-O thin film transistor

The influences of Ti, Mo, and Au as the source/drain electrodes on the electrical performance of an inverted– staggered Ga-Sn-O thin-film transistor (GTO-TFT) has been studied using ATLAS of SILVACO®. To explain the electrical behavior of the transistor, the current-voltage (I-V) characteristics of the device have been simulated in termsof on/off current ratio (Ion/Ioff), subthreshold swing (SS), and saturation current (Idssat). By comparing various parameter of the device in presence of different S/D electrodes, it was found that the Ti S/D gives the largest Ion/Ioff of 1.9×10 7, the smallest SS of 0.351 V/decade, and the largest Ids,sat of 2.17×10-5 A, compared to the Mo and Au, indicates a good ohmic characteristics due to effective interfacial reaction between Ti and GTO semiconducting layer.

کلیدواژه ها:

Ga-Sn-O (GTO) ، Thin-film transistor (TFT) ، SILVACO ، S/D electrodes ، density of state model (DOS).