The Effects of Charged Impurity on the Electrical Properties of Buckled Silicene

In this work, the electrical properties of armchair silicene nanoribbon (ASiNR) in the presence of charged impurity is studied. The non-equiblruim Green s function along with multi-orbital tight-binding is applied to obtain transmission probability. The charged impurities are located in the underlying substrate. Spin-flip along the channel is calculated by using spin transmission probability. Mean free path is reported in presence of a charged impurity.

کلیدواژه ها:

Silicene ، Electrical transport ، NEGF ، Mean free path.