The Effects of Charged Impurity on the Electrical Properties of Buckled Silicene
عنوان مقاله: The Effects of Charged Impurity on the Electrical Properties of Buckled Silicene
شناسه ملی مقاله: CMTS02_154
منتشر شده در دومین کنفرانس بین المللی فناوری های نوین در علوم در سال 1397
شناسه ملی مقاله: CMTS02_154
منتشر شده در دومین کنفرانس بین المللی فناوری های نوین در علوم در سال 1397
مشخصات نویسندگان مقاله:
Shoeib Babaee Touski - Department of Electrical Engineering, Hamedan University of Technology, Hamedan ۶۵۱۵۵, Iran
خلاصه مقاله:
Shoeib Babaee Touski - Department of Electrical Engineering, Hamedan University of Technology, Hamedan ۶۵۱۵۵, Iran
In this work, the electrical properties of armchair silicene nanoribbon (ASiNR) in the presence of charged impurity is studied. The non-equiblruim Green s function along with multi-orbital tight-binding is applied to obtain transmission probability. The charged impurities are located in the underlying substrate. Spin-flip along the channel is calculated by using spin transmission probability. Mean free path is reported in presence of a charged impurity.
کلمات کلیدی: Silicene, Electrical transport, NEGF, Mean free path.
صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/899546/