Impact of Length and Diameter of Channel on Carbon Nanotube Field Effect Transistors

Decreasing the channel length of transistors, lead to high integrated and density circuits and consequently it is most important challenge in fabrication process. Carbon nanotube field effect transistors (CNTFETs) have high ability to channel decreasing as high as possible because of their unique carrier transport properties. In this work we demonstrate that performance of these devices is affected by channel length and diameter changing. We also study leakage current in the ballistic channel arising from band to band tunnelling based on changes in channel properties. It can be seen that in high diameter values, decreasing the length increases leakage and then leads to degrade Ion/Ioff ratio. In high “n” values, after certain amount of channel length, no change will be seen in device performance because channel is assumed that will be ballistic. It’s required to diameter scaling to minimize leakage along with channel length decreasing.

کلیدواژه ها:

Carbon Nanotube ، Field Effect Transistor ، Channel Length ، Non-Equilibrium Green’s Function (NEGF)