A New Ternary Memory Cell Based on CNTFETs Using Forced Stack Technique
محل انتشار: سومین کنفرانس بین المللی مهندسی برق
سال انتشار: 1397
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 481
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شناسه ملی سند علمی:
ICELE03_124
تاریخ نمایه سازی: 18 اسفند 1397
چکیده مقاله:
In this paper, we first designed a new ternary inverter gate with Forced Stack (FS) technique using CNTFETs,called FS-STI, then with using cross-coupled two FS-STI inverters, a new ternary memory cell based on CNTFETtransistors presented. In the new memory cell, a ternary buffer gate has been used in addition to using FS-STI inverters.Simulation results indicated that power consumption of proposed memory cell in read and write operations is less thanthe conventional ternary memory cell. Also, standby power of proposed ternary memory cell is improved compared toother types. Instead, delay in read and write operations of proposed ternary memory cell increased. But, power delayproduct of the proposed memory cell improved compared to conventional memory cell.
کلیدواژه ها:
نویسندگان
Amir Ghadiyani
۱Department of Electric, Faculty of Electrical and Biomedical Engineering , Qazvin Branch, Islamic Azad University, Qazvin, IRAN
Ali Shahhoseini
Department of Electric, Faculty of Electrical and Biomedical Engineering , Qazvin Branch, Islamic Azad University,Qazvin, IRAN