Electrophoretic deposition of uniform graphene oxide thin film on poroussilicon substrate

In present work, a uniform thin film of graphene oxide (GO) was deposited on porous silicon(PS) substrate. GO was successfully synthesized using the modified Hummer’s method and wasefficiently deposited onto photo-electrochemically etched PS substrate using electrophoreticdeposition (EPD) technique. The morphology and structural properties of synthesized anddeposited layer was investigated using field emission scanning electron microscopy and Ramanspectroscopy. The results showed that high surface area of porous structure facilitated depositionof GO. Thus, a uniform and high quality thin film of GO was deposited on PS substrate.

کلیدواژه ها:

Porous silicon ، Photo-electrochemical etching ، Graphene oxide ، Electrophoreticdeposition