Design and Performance analysis of logic gates in 32nm CNTFET Technology

Silicon technology continues to scale down and is a dominant choice for high-performance digital circuits. Carbon Nanotube Field Effect Transistors (CNTFETs) are one of the emerging Candidates nanotechnology, which is showing high efficiency at small scales to replace mainstream CMOS for Integrated Circuits. In this paper, we have designed and studied the performance of several digital gates including 4:1 Mux, Half Adder, XOR and 4-bit ALU using CMOS & CNTFET technologies in 32nm node for high speed applications. The performances are evaluated and compared in terms of power consumption, delay and power delay product (PDP) and demonstrate the potential feasibility of CNTFET to replace CMOS transistors for design of digital circuits

کلیدواژه ها:

ALU design ، compare between CMOS & CNTFET ، ALU parameters in CMOS & CNTFET