The Effect of Adding InGaN Interlayer on AlGaN/GaN Double Channel HEMT for Noise Improvement

In this paper, the microwave noise of Al0.3Ga0.7N/GaN heterojunction high electron-mobility transistors (HEMTs) with three different structures is investigated by using TCAD extensive simulations. By inserting a 21 nm Al0.05Ga0.95N bottom barrier layer at 14 nm away from the AlGaN/GaN heterointerface, the device shows higher transconductance and lower minimum noise figure (NFmin) than conventional AlGaN/GaN HEMT. In order to further improve the device performance, a new AlGaN/GaN DC-HEMT structure is proposed by inserting a 3 nm In0.1Ga0.9N layer at 6 nm away from the Al0.05Ga0.95N/GaN heterointerface. Due to higher carrier density and mobility, AlGaN/GaN DC-HEMT with In0.1Ga0.9N shows higher transconductance and lower NFmin than Al0.3Ga0.7N/GaN DC- HEMT.

کلیدواژه ها:

AlGaN/GaN ، double channel (DC) HEMTs ، InGaN ، minimun noise figure (NFmin)