Investigation of the Stability of Te doped InSb Structure

One of the materials for the application in optoelectronic is InSb Crystals [1]. For the growthof InSb Crystals different methods have been used [2-4]. In this communication weinvestigate the effect of different percentages of Tellurium as a dopant on the stability of InSbstructure. For this purpose, we considered doping levels of 3.125%, 6.25%, 12.5% and 25%into the InSb structure.