A low power and high gain CMOS LNA for UWB applications using a gate inductor

A new ultra wideband low noise amplifier is presented.The ultra wideband LNA consists of two simple amplifiers. A common source topology by gate inductor is adopted for input stage to achieve wideband input matching and wider bandwidth. The second stage by noise cancelling technique achivies high flat gain .Realized in standard TSMC8110μM CMOS. It achieves a maximum power gain of 11.0 dB, a bandwidth of 18GHz and 414dB minimum noise fiqure.The power consumption is 22mW from a 110v supply.

کلیدواژه ها:

UWB ، CMOS ، gain-flatness ، Noise figure ، low noise amplifier