An Investigation into Electrical Characteristics of the Double Gate p-IMOS and its Comparison with the Single Gate p-IMOS

In this paper a double gate p-IMOS (DG p- IMOS) device is analyzed. Simulation studies at 400 K show that not only this device provides smaller subthreshold slope, threshold voltage and gate capacitance but also larger ON/OFF current ratio and higher transconductance as compared to an equivalent single gate p-IMOS (SG p-IMOS).

کلیدواژه ها:

CMOS multistage amplifiers ، nested Miller compensation ، and active capacitive feedback