Studying the Behavior of Silicon Nanowires Considering Tensile and Torsional Loading: [100], [110] and [111] Directions

This paper considers silicon nanowires (SiNW) in [100], [110] and [111] directions using the structural mechanic approach and the numerical method by ABAQUS software, which there are differentlengths, ranging from 0.5 to 20 nm, and various thicknesses from 1 to 4 nm. While DREIDING is employed for the force field, mechanicalproperties are investigated as well which are Poisson's ratio, shear modulus, and Young's modulus. The aim of this research is to study thebehavior of SiNW under tensile and torsional loading. The results of our calculations show that the proposed approach has higher analyzingspeed and more appropriate accuracy than other investigated methods like molecular dynamics. Besides, there is a tendency for Young's andshear modulus to the bulk elastic properties of silicon which are 7-10 nm in thickness. Finally, the conclusion and future research are presented

کلیدواژه ها:

Silicon Nanowires (SiNW) ، Structural Mechanics Approach ، Numerical Method ، DREIDING ، Young's modulus ، Shear modulus