Analysis and Modeling of the Effect of Statistical Fluctuations on (6T) nano-CMOS SRAM Cell Stability

Static RAM cells are among the most important fundamental blocks of digital circuits. These cells go through considerable statistical fluctuations as a result of scale change of the bulk-CMOS technology to nanometer scales. This scale change is aimed to increase data storage density.It also influences static RAM stability significantly[1, 2]. In this research, the statistical sensitivity of static noise margin was analyzed in non-ideal conditions and the statistical stability of SRAM cells was examined to recognize weak cells

کلیدواژه ها:

Static Noise Margin(SNM) ، Random Dopant Fluctuations(RDF) ، Line Edge Roughness(LER) ، Polysilicon Gate Granularity(PGG)