Characterizations of a Single Quantum Well GaAs-based Laser Diode with Different Gain Model

In semiconductor laser simulations, the gain model plays a vital role as it determines how the laser medium amplifies light, greatly influencing key performance parameters such as threshold current and output power. This study examines how different gain models influence the performance of a GaAs-based laser diode, using the PICS۳D simulator for analysis. The simulator integrates three-dimensional simulations of carrier transport, self-heating effects, and optical wave-guiding in a self-consistent manner. The simulation outcomes indicate that employing various gain models leads to differing diode laser characterizations.

کلیدواژه ها:

Quantum well ، Simulation ، Power ، Threshold current ، PICS۳D