Investigating the Effects of the Adasa Model on Gain Characteristics of InP-Based Strain Compensated Multiple Quantum Well Laser Diode

Broadening models play an essential role in gain simulations as they incorporate different physical phenomena that affect both the spectral profile and the magnitude of the optical gain. This work employs the PICS۳D simulation software, which integrates three-dimensional simulations of carrier transport, self-heating effects, and optical wave-guiding in a self-consistent manner. This study shows that using the Asada model yields results that differ from those obtained with the Lorentzian model regarding the gain characteristics of InGaAsP strain-compensated multiple quantum wells.

کلیدواژه ها:

Simulation ، Gain ، Adasa Model ، PICS۳D ، Multiple Quantum Well