Asymmetric Multi-Quantum Well Semiconductor Lasers with Non-Step Potential Barriers

Numerical simulations of symmetric or asymmetric multi-quantum well semiconductor lasers are done usually based on the abrupt variations in the neighboring materials. Practically, it is not possible to construct such quantum wells because the material mole fraction of compound semiconductors cannot change abruptly. In this paper, an asymmetric multi-quantum well semiconductor laser with a Gaussian-well shape is used to simulate this effect. It is found that for In۰.۷۲Ga۰.۲۸As۰.۶P۰.۴ lasers, application of this assumption causes about sixty-percent variations in the output wavelength of the laser and for different numbers of the quantum wells this deviation can be varied.

کلیدواژه ها:

Multi-quantum well semiconductor laser ، Schrödinger equation ، Numerical simulation ، Wavelength differential