FLEXIBLE CU(IN,GA)SE2 SOLAR CELLS WITH IN2S3 BUFFER LAYER

Polycrystalline Cu(In,Ga)Se2 (CIGS) thin films on flexible metallic foils (titanium, molybdenum, aluminum, stainless steel) were prepared by a twostepselenization of co-evaporated metallic precursors in Se-containing environment under N2 gas flow. Characterisations included studies of morphologicalfeatures, formation of crystalline phases and the depth compositional uniformity of the final thin films. To characterize the optical quality and intrinsicdefect nature low-temperature photoluminescence, photoluminescence excitation measurements were performed. Experiments shows that the structural andoptical properties of CIGS absorber layers strongly depend on the growth condition, type of substrate and chemical composition. With an aim to developflexible CIGS solar cells with vacuum evaporated In2S3 buffer layer, an attempt has been made to investigate physical properties of films grown bythermal evaporation technique. Solar cells were completed by vacuum deposition of ZnO/ZnO:Al layers and Ni/Al contact fingers. The better conversion efficiencies were around 10.0 %.