High-Efficiency L-Band GaN Power Amplifier Employing Second and Third Harmonic Impedance Optimization

This paper presents the design and evaluation of a high-efficiency harmonic tuned L-band power amplifier (PA) utilizing a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). To meet the demands of modern wireless communication and radar systems operating in the L-band, advanced harmonic tuning techniques were employed, specifically focusing on controlling the impedance terminations at the second (۲f₀) and third (۳f₀) harmonic frequencies. Through careful load-pull analysis and optimized output matching network design, precise harmonic terminations were achieved alongside optimal fundamental frequency impedance matching. The fabricated PA demonstrates state-of-the-art performance, delivering a saturated output power (Psat) of ۴۶.۴ dBm with a corresponding peak Power Added Efficiency (PAE) of ۸۳%. Critically, the PA maintains high efficiency under back-off conditions, achieving ۶۰% PAE at ۳ dB output back-off (OBO). These results highlight the effectiveness of this combined second and third harmonic optimization approach with GaN HEMT technology, which enables both high peak efficiency and excellent back-off efficiency for demanding L-band applications.

کلیدواژه ها:

Power Amplifier (PA) ، Gallium Nitride (GaN) ، L-Band ، Harmonic Tuning ، High Efficiency ، Power Added Efficiency (PAE) ، Second and Third Harmonics