Novel CNTFET with negative/positive slope impurity distribution to manage the nano-dimension effects

Where a transistor is scaled to the nano dimension, it faces the problem of short-channel effects (SCEs), which reduce the gate control over the channel. The operation of carbon nanotube field effect transistors (CNTFETs) is completely sensitive to SCEs. Here, we propose a specific doping profile to manage the SCEs in CNTFETs. It includes graded doping with negative or positive slope for different regions of device. This profile manages the band to band tunneling and boosts the current ratio, subthreshold swing, and voltage gain. Tus, the proposed device is a transistor with improved short channel characteristics. Numerical simulation is used to obtain the results from Poisson and Schrodinger equations.

کلیدواژه ها:

CNTFETs ، PDP ، Short Channel Effects ، Subthreshold swing