Scalability and Performance of Dual Wire Gate All Around Nanosheet FETs in Next-Generation Electronics

In this paper, we propose a new variation of the Gate All Around Nanosheet Field Effect Transistor (GAA NS FET), incorporating Dual Wire (DW) strained channels. We examine its electrical performance at a temperature of ۳۰۰K and compare it with the Conventional DW GAA NS FET and the Conventional GAA FET. Our study investigates the impact of electrostatic control on DC and analog parameters, such as gate capacitance and transconductance, for all three device types. The channel regions of the proposed structures are composed of Silicon Germanium (Si/Ge/Si), and the combination of strain and the heterojunction design leads to significant enhancements in device performance. To accurately model the semiconductor device, we solve the Density Gradient (DG) equation self-consistently, applying the Shockley-Read-Hall (SRH) equation to estimate carrier generation, while also considering the effects of bandgap narrowing on transport behavior and accounting for Auger recombination. Notably, at ۳۰۰K, the Conventional DW GAA NS FET demonstrates a substantial improvement in both Ion and Ioff compared to the Conventional GAA FET.

کلیدواژه ها:

Conventional GAA FET ، Nanosheet ، Dual wire ، Density Gradient (DG)