Characterisation and Modeling of Terahertz Field Generation of Photoconductive Antennas Based on Semi Insulating and Low Temperature Grown GaAs

سال انتشار: 1392
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 1,489

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شناسه ملی سند علمی:

CECIT01_763

تاریخ نمایه سازی: 14 شهریور 1392

چکیده مقاله:

The properties of terahertz emission has been investigated from photoconductive switches based GaAs, gated by a femtosecond laser. The emission properties of photoconductive antenna (PCA) based on low-temperature-grown (LTG) GaAs has been studied and compared with those of semi-insulating (SI) GaAs PCAs. In such GaAs materials presence of the charged defects induces a redistribution of the electric field between the antenna electrodes. This effect has a huge influence on the amplitude of the radiated terahertz field. In this work we demonstrate that carrier lifetime affects the transient response of the antenna, and the mobility of electrons (and holes) affects the power of radiation. LTG-GaAs with lower carrier lifetime is more appropriate than SI-GaAs for high frequency applications, and SI-GaAs with higher mobility has better results in high power applications. Furthermore, the design of contacts investigated to achieve better directivity and gain of photoconductive antennas

نویسندگان

Mohamad Ali Malakoutian

School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran,

Mandana Danesh

Islamic Azad University, Tehran, Iran,

Alireza Mojab

School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran

Morteza Fathipour

School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran