Enhancing SOI MESFET Performance through Gate Electrode Shifting and Optimization Using Nickel and Oxide Layers

In this paper, a new SOI MESFET structure is presented with modifications made to the channel of the transistor. The gate electrode is shifted near the source, and two parallel layers of oxide and aluminum are added at the edge of the gate, along with an additional aluminum layer along the channel. These changes have significantly improved the DC and RF specifications compared to the conventional structure. The breakdown voltage has increased from ۱۵.۸ V in the conventional structure to ۳۰.۷ V in the proposed structure. Due to the increase in transconductance and the significant decrease in gate-source and gate-drain capacitance, the cut-off frequency has increased from ۱۹.۳ GHz to ۳۵.۵ GHz, and the maximum oscillation frequency has risen from ۸۰ GHz to ۱۵۴ GHz. Additionally, the maximum output power has significantly increased from ۰.۲۳۸ W/mm in the base structure to ۰.۸۷۶ W/mm in the proposed structure, marking a ۳.۶-fold improvement. Therefore, the results demonstrate that the proposed structure is efficient and capable of operating with high power and high frequency.

کلیدواژه ها:

SOI MESFET ، Breakdown Voltage ، Cut-Off Frequency ، MaximumOscillation Frequency ( Fmax)