Study of optoelectronic properties of transparent conductorbased on zinc oxide doped with aluminum

In this study, a three-layer structure of AZO x nm/Ag ۱۰nm/AZO x nm was designed and simulated onglass using the Essential Macleod software. The main objective of designing these structures was to improveand optimize the optical transmittance and electrical resistivity properties. The aim was to achieve highoptical transmittance and low electrical resistivity simultaneously. These structures can be optimally used invarious optoelectronic applications. The best results were obtained using the AZO ۴۰nm/Ag ۱۰nm/AZO۴۰nm structure. In this configuration, the silver layers had a thickness of ۱۰ nanometers, and the AZO layershad a thickness of ۴۰ nanometers. With these settings, a figure of merit (FTC) value of ۰.۰۲۹۲ Ω-۱ wasachieved, which represents the highest possible performance of the structure. Additionally, the surfaceresistivity was approximately ۲۶.۹ Ω/sq, and the transmittance in the visible range was ۹۷.۶%. Due to its lowelectrical resistivity and high transmittance, this structure can be used as a transparent conductive electrode inoptoelectronic applications. It can serve as a suitable alternative to conventional electrodes and significantlyimprove the performance and efficiency of optoelectronic devices

کلیدواژه ها:

electrode ، transparent conductor ، AZO ، optoelectronics