Electrical and Optical Properties of AlN and P@AlN Nanosheets: A DFT Study

This study explores the impact of P atom doping on AlN nanosheets' structural, electrical, and opticalproperties. Results show enhanced stability in AlN@P nanosheets with a lower direct band gap of ۲.۷۳ eVcompared to AlN. Doped P atoms induce n-type doping and a red shift in optical absorption.

کلیدواژه ها:

AlN nanosheet ، Electrical property ، Optical property ، Doped atom