Evaluating the Performance Effect of Dual-Metal on Double Gate MOSFET

The complexity of designing CMOS circuits with nanoscale MOSFETs has significantly increased inrecent years due to new challenges like mobility degradation and short-channel effects in devicemodeling. To address these challenges and enhance carrier mobility, gate and channel engineeringtechniques have been employed, resulting in improved drain current and transconductance. This studyinvestigates and discusses the impact of gate engineering techniques on multi-gate MOS devices. Themanuscript provides a thorough examination of the effects of metal gate work functions and doublegateMOS devices using two-dimensional simulation tools. The findings suggest that the proposeddual-metal gate-stack DG MOSFET exhibit reduced leakage current and mitigated short-channeleffects, ultimately demonstrating superior analog RF performance when compared to conventionalsingle-metal MOS devices.

کلیدواژه ها:

DGMOSFET ، Dual-Metal Gate-Stack ، Work function ، High-k ، Low-K.