Gain Characteristics of Strain Compensated Multiple Quantum Well Laser Diode Based on InP
محل انتشار: پنجمین کنفرانس بین المللی محاسبات نرم
سال انتشار: 1402
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 24
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شناسه ملی سند علمی:
CSCG05_114
تاریخ نمایه سازی: 9 اردیبهشت 1403
چکیده مقاله:
The design of heterostructures that exhibit desired strain characteristics is critical issue for the realization of semiconductor lasers with improved performance. The work described in this article is a theoretical study of the strain compensation effect on the gain characteristics of a typical InP-based multiple quantum well laser diode by using simulation software PICS۳D. The simulator self-consistently combines ۳D simulation of carrier transport, self-heating, and optical wave-guiding. Valence band structures, relative transition strength, peak gain and gain spectrum are investigated theoretically. Simulation results show that strain compensated barriers show better performance compared to conventional unstrained barriers.
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نویسندگان
Zahra Danesh Kaftroudi
Department of Engineering Sciences, Faculty of Technology and Engineering East of Guilan, University ofGuilan, Rudsar-Vajargah, Iran