Effect of Hydrostatic Pressure on Optical Absorption Coefficient of InGaN/GaN of Multiple Quantum Well Solar Cells

سال انتشار: 1400
نوع سند: مقاله ژورنالی
زبان: انگلیسی
مشاهده: 109

فایل این مقاله در 22 صفحه با فرمت PDF قابل دریافت می باشد

استخراج به نرم افزارهای پژوهشی:

لینک ثابت به این مقاله:

شناسه ملی سند علمی:

JR_JOPN-6-2_001

تاریخ نمایه سازی: 25 بهمن 1402

چکیده مقاله:

In this paper, a numerical model is used to analyze an optical absorption coefficient according to the electronic properties of InGaN/GaN multiple-quantum-well solar cells (MQWSC) under hydrostatic pressure. Finite difference techniques have been used to acquire energy eigenvalues and their corresponding eigenfunctions of InGaN/GaN MQWSC and the hole eigenstates are calculated via a ۶*۶ k.p method under the applied hydrostatic pressure. All symmetry-allowed transitions up to the fifth subband of the quantum wells (multi-subband model) and barrier optical absorption, as well as the linewidth due to the carrier-carrier and carrier-longitudinal optical (LO) phonon scattering, are considered here. A change in the pressure up to ۱۰ GPa increases the intraband scattering time up to ۳۸fs and ۴۰fs for light and heavy holes, respectively, raises the height of the Lorentz function and reduces the excitonic binding energy. The multi-subband model has a positive effect on the optical absorption coefficient and increases it by %۱۷, contrary to the pressure function.

نویسندگان

Rajab yahyazadeh

Department of Physics, Khoy branch, Islamic Azad University, Khoy, Iran

zahra hashempour

Department of Physics, Khoy Branch, Islamic Azad University, Khoy, Iran

مراجع و منابع این مقاله:

لیست زیر مراجع و منابع استفاده شده در این مقاله را نمایش می دهد. این مراجع به صورت کاملا ماشینی و بر اساس هوش مصنوعی استخراج شده اند و لذا ممکن است دارای اشکالاتی باشند که به مرور زمان دقت استخراج این محتوا افزایش می یابد. مراجعی که مقالات مربوط به آنها در سیویلیکا نمایه شده و پیدا شده اند، به خود مقاله لینک شده اند :
  • Boudaoud, A. Hamdoune, Z. Allam. Simulation and optimization of a ...
  • Kuc, L. Piskorski, M. Dems, M. Wasiak, A. K. Sokoł, ...
  • Tian, L. Hu, L. Zhang, J. Liu, H. Yang. Design ...
  • Pandey, W. J. Shin, J. Gim, R. Hovden, Z. Mi. ...
  • Huang, H. Chen et al. Energy band engineering of InGaN/GaN ...
  • G. Bhuiyan, K. Sugita, A. Hashimoto, A. Yamamoto. InGaN solar ...
  • Wu, W. Walukiewicz et al. Small band gap bowing in ...
  • Yahyazadeh, Effect of hydrostatic Pressure on Optical Absorption Spectrum AlGaN/GaN ...
  • Yahyazadeh, Z. hashempour. Effects of Hydrostatic Pressure and Temperature on ...
  • The effect of temperature on optical absorption cross section of bimetallic core-shell nano particles [مقاله ژورنالی]
  • Enhancing Efficiency of Two-bond Solar Cells Based on GaAs/InGaP [مقاله ژورنالی]
  • Deng et al. An investigation on InxGa۱−xN/GaN multiple quantum well ...
  • Belghouthi, M. Aillerie. Temperatur dependece of InGaN/GaN Multiple quantum well ...
  • Chouchen, M. H. Gazzah, A. Bajahzar, Hafedh Belmabrouk. Numerical Modeling ...
  • Yahyazadeh. Numerical Modeling of the Electronic and Electrical Characteristics of ...
  • Huang. Piezo-Phototronic Effect in a Quantum Well Structure. ACS Nano. ...
  • Ambacher, A. B. Foutz, J. Smart, J. R. Shealy, N. ...
  • Ambacher, J. Majewski, C. Miskys, et al. Pyroelectric properties of ...
  • J. Feng, Z. J. Cheng, and H. Yue. Temperature dependence ...
  • Fiorentini, F. Bernardini, and O. Ambacher. Evidence for nonlinear macroscopic ...
  • Perlin, L. Mattos, N. A. Shapiro, J. Kruger, W. S. ...
  • J Bala, A. J Peter, C. W Lee. Simultaneous effects ...
  • Vurgaftman, J. R Meyer, L. R. R Mohan. Band parameters ...
  • Jogai. Influence of surface states on the two-dimensional electron gas ...
  • Jogai. Parasitic Hole Channels in AlGaN/GaN Heterojunction Structures. Phys. stat. ...
  • B. Yekta, H. Kaatuzian. Design considerations to improve high temperature ...
  • Piprek, Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation, Elsevier ...
  • Optoelectronic Properties of PbS Films: Effect of Carrier Gas [مقاله ژورنالی]
  • S. Zory, Quantum well lasers, Academic. San Diego. Ca, ۱۹۹۳, ...
  • D. Mahan, Many-body particle physics, Plenum press, New York and ...
  • Wei-Ying et al. Effects of interface roughness on photoluminescence full ...
  • yahyazadeh, Z. Hashempour. Numerical Modeling of Electronic and Electrical Characteristics ...
  • H. Ha, S. L. Ban. Binding energies of excitons in ...
  • G. Rojas-Briseno, I. Rodriguez-Vargas, M. E. Mora-Ramos, J.C. Martínez-Orozco. Heavy ...
  • Harrison, A. Valavanis, Quantum Wells, Wires and Dots: Theoretical and ...
  • Kasapoglu, H. Sari, N. Balkan, I. Sokmen, Y. Ergun. Binding ...
  • G. Rojas-Briseño, J.C. Martínez-Orozco, M.E. Mora-Ramos. States of direct and ...
  • R Yahyazadeh, Hashempour. Effect of Hydrostatic Pressure and Temperature on ...
  • L. Chung, C.S. Chang. k.p method for strained wurtzite semiconductor. ...
  • Adachi, Physical Properties of III-V compounds, John Wiley & Sons, ...
  • R. Chinn, P. S. Zory, A. R. Reisinger. A Modal ...
  • Tan, G. L. Snider, L. D. Chang, E. L. Hu. ...
  • Huang et al. Piezo-Phototronic Effect in a Quantum Well Structure. ...
  • Dongmei, W. Zongchi, X. Boqi. Correlated electron–hole transitions in wurtzite ...
  • نمایش کامل مراجع