Study of I–V in CNT zigzag BN nanotube

We numerically investigate the conductance properties and I-V characteristics of (n, ۰) zigzag single-walled nanotubes. In the BN/CNT/BN structure using a tight-binding model and some well-known approaches and methods based on Green's function theory and Landauer formalism, where nanocontacts are of as (n,۰) zigzag single-walled carbon nanotubes. We compare them in three cases when n= (۸, ۰), n= (۱۴, ۰), and n= (۱۶, ۰). We calculate the value of Dos in a tight-binding Hamiltonian way in its case when for the three cases when the shape of the tube is zigzag and knowing the voltage and current for each case. We perform the calculations theoretically using MATLAB program. We investigate the conductivity and I-V characteristics of zigzag (n, ۰) single-walled BN nanotubes in a BN/CNT/BN structure using Landauer formalism and Green's function theory. Electronic band structures and density of states of (n, ۰) for (۸, ۱۴, ۱۶) carbon nanotubes in the presence of different amount of B and N impurities were calculated. It was found that these impurities have significant effect on the conductivity of carbon nanotubes. The electronic properties of small gap semiconducting (n, ۰) tube can extensively change in the presence of impurity. Our results indicate that B-doped and N-doped (n, ۰) carbon nanotubes can be p- and n-type semiconductors, respectively.